- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,233
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 2.6A 6MICROFET | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.6A (Ta) | 142 mOhm @ 2.3A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | 405pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,102
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 20V 1.8A 4WLCSP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | 4-AlphaDFN (0.97x0.97) | 450mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 95 mOhm @ 1A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 405pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,843
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 8-SOIC | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 130 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
908
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 3.5A 8SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 130 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
2,698
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 3.1A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 860mW (Ta), 1.6W (Tc) | P-Channel | - | 20V | 3.1A (Tc) | 112 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
3,679
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 3.1A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 860mW (Ta), 1.6W (Tc) | P-Channel | - | 20V | 3.1A (Tc) | 112 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V |