- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,358
In-stock
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Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
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VIEW |
604
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 60V | 100A (Tc) | 5 mOhm @ 100A, 10V | 4V @ 270µA | 167nC @ 10V | 6100pF @ 30V | 10V | ±20V | |||
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VIEW |
2,915
In-stock
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Infineon Technologies | MOSFET N-CH 150V 100A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V |