- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,475
In-stock
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Infineon Technologies | MOSFET N-CH 55V 160A TO-263-7 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V | |||
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VIEW |
3,687
In-stock
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Infineon Technologies | MOSFET N-CH 24V 429A D2PAK-7 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 300W (Tc) | N-Channel | - | 24V | 240A (Tc) | 1 mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | 10V | ±20V | |||
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VIEW |
3,327
In-stock
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Infineon Technologies | MOSFET N-CH 75V 160A D2PAK7 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 300W (Tc) | N-Channel | - | 75V | 160A (Tc) | 3.8 mOhm @ 110A, 10V | 4V @ 250µA | 260nC @ 10V | 7580pF @ 25V | 10V | ±20V |