- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,002
In-stock
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Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 55V | 75A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | 10V | ±20V | |||
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VIEW |
744
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 7530pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,455
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,486
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 75A I2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 75A (Tc) | 5.8 mOhm @ 25A, 10V | 2V @ 1mA | - | 8600pF @ 25V | 4.5V, 10V | ±15V | |||
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VIEW |
714
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
2,040
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.3 mOhm @ 80A, 10V | 4V @ 230µA | 480nC @ 10V | 21620pF @ 25V | 10V | ±20V | |||
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VIEW |
2,971
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 155nC @ 10V | 3850pF @ 25V | 10V | ±20V | |||
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VIEW |
3,917
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 142nC @ 10V | 5300pF @ 25V | 10V | ±20V | |||
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VIEW |
731
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V |