Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPCA8048-H(TE12L,Q
RFQ
VIEW
RFQ
2,300
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 35A 8-SOP ADV U-MOSVI-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 60V 35A (Ta) 6.6 mOhm @ 18A, 10V 2.3V @ 1mA 90nC @ 10V 7540pF @ 10V 4.5V, 10V ±20V
TPN14006NH,L1Q
RFQ
VIEW
RFQ
2,591
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 13A (Ta) 14 mOhm @ 6.5A, 10V 4V @ 200µA 15nC @ 10V 1300pF @ 30V 6.5V, 10V ±20V
STL11N6F7
RFQ
VIEW
RFQ
1,858
In-stock
STMicroelectronics MOSFET N-CH 60V 11A POWERFLAT STripFET™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 2.9W (Ta), 48W (Tc) N-Channel - 60V 11A (Ta) 12 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 1035pF @ 30V 10V ±20V
BSZ076N06NS3GATMA1
RFQ
VIEW
RFQ
998
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 69W (Tc) N-Channel - 60V 20A (Tc) 7.6 mOhm @ 20A, 10V 4V @ 35µA 50nC @ 10V 4000pF @ 30V 10V ±20V