Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIE810DF-T1-GE3
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1,814
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Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.4 mOhm @ 25A, 10V 2V @ 250µA 300nC @ 10V 13000pF @ 10V 2.5V, 10V ±12V
SIE810DF-T1-E3
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2,490
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Vishay Siliconix MOSFET N-CH 20V 60A 10-POLARPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.4 mOhm @ 25A, 10V 2V @ 250µA 300nC @ 10V 13000pF @ 10V 2.5V, 10V ±12V
NTLGF3501NT2G
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RFQ
1,765
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ON Semiconductor MOSFET N-CH 20V 2.8A 6-DFN FETKY™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-DFN (3x3) 1.14W (Ta) N-Channel - 20V 2.8A (Ta) 90 mOhm @ 3.4A, 4.5V 2V @ 250µA 10nC @ 4.5V 275pF @ 10V 2.5V, 4.5V ±12V
NTLGF3402PT2G
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RFQ
1,402
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ON Semiconductor MOSFET P-CH 20V 2.3A 6-DFN FETKY™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-DFN (3x3) 1.14W (Ta) P-Channel - 20V 2.3A (Ta) 140 mOhm @ 2.7A, 4.5V 2V @ 250µA 10nC @ 4.5V 350pF @ 10V 2.5V, 4.5V ±12V
IRF7456TRPBF
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RFQ
1,804
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Infineon Technologies MOSFET N-CH 20V 16A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 16A (Ta) 6.5 mOhm @ 16A, 10V 2V @ 250µA 62nC @ 5V 3640pF @ 15V 2.8V, 10V ±12V
IRF7456TRPBF
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RFQ
1,351
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Infineon Technologies MOSFET N-CH 20V 16A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 16A (Ta) 6.5 mOhm @ 16A, 10V 2V @ 250µA 62nC @ 5V 3640pF @ 15V 2.8V, 10V ±12V
IRF7456TRPBF
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RFQ
3,941
In-stock
Infineon Technologies MOSFET N-CH 20V 16A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 16A (Ta) 6.5 mOhm @ 16A, 10V 2V @ 250µA 62nC @ 5V 3640pF @ 15V 2.8V, 10V ±12V