- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
927
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,948
In-stock
|
ON Semiconductor | -20V -3.1A 95 O PCH ER T | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.1A (Ta) | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,434
In-stock
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Sanken | MOSFET N-CH 450V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 450V | 7A (Ta) | 1.1 Ohm @ 3.5A, 10V | 4V @ 1µA | - | 720pF @ 10V | 10V | ±30V | |||
|
VIEW |
2,692
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,314
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.1A 2X2MLP | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Tj) | P-Channel | Schottky Diode (Isolated) | 20V | 3.1A (Ta) | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,177
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.1A 2X2MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Tj) | P-Channel | Schottky Diode (Isolated) | 20V | 3.1A (Ta) | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
880
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.1A 2X2MLP | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Tj) | P-Channel | Schottky Diode (Isolated) | 20V | 3.1A (Ta) | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | 2.5V, 4.5V | ±12V | |||
