Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM6NB60CZ C0G
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2,426
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40W (Tc) N-Channel 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V
SPU11N10
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2,031
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Infineon Technologies MOSFET N-CH 100V 10.5A IPAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA P-TO251-3 50W (Tc) N-Channel 100V 10.5A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 18.3nC @ 10V 400pF @ 25V 10V ±20V
TSM6NB60CI C0G
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3,850
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V