Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX23NQ10T,127
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1,646
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NXP USA Inc. MOSFET N-CH 100V 13A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) N-Channel - 100V 13A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 1187pF @ 25V 10V ±20V
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3,201
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Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel - 100V 14.4A (Tc) 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V - 12V ±20V
IXTX170P10P
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693
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IXYS MOSFET P-CH 100V 170A PLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 890W (Tc) P-Channel - 100V 170A (Tc) 12 mOhm @ 500mA, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V
IXTR170P10P
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2,167
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IXYS MOSFET P-CH 100V 108A ISOPLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 312W (Tc) P-Channel - 100V 108A (Tc) 13 mOhm @ 85A, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V
IXTK170P10P
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2,135
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IXYS MOSFET P-CH 100V 170A TO-264 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 890W (Tc) P-Channel - 100V 170A (Tc) 12 mOhm @ 500mA, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V