- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,471
In-stock
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Infineon Technologies | MOSFET N-CH 600V 7.3A TO251 | CoolMOS™ C6 | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 63W (Tc) | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
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3,802
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO-251-3 | CoolMOS™ C6 | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | |||
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1,877
In-stock
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Infineon Technologies | MOSFET N-CH 600V 4.4A TO251 | CoolMOS™ C6 | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 37W (Tc) | N-Channel | - | 600V | 4.4A (Tc) | 950 mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | 10V | ±20V |