Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCPF190N65FL1
RFQ
VIEW
RFQ
1,569
In-stock
ON Semiconductor MOSFET N-CH 650V 20.6A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 650V 20.6A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 78nC @ 10V 3055pF @ 100V 10V ±20V
FCU2250N80Z
RFQ
VIEW
RFQ
3,016
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A IPAK SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V
FCPF190N60E
RFQ
VIEW
RFQ
3,910
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 10V ±20V
FCPF190N60-F152
RFQ
VIEW
RFQ
895
In-stock
ON Semiconductor MOSFET N-CH 600V 20.2A TO-220F SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 10V ±20V
FCPF190N60
RFQ
VIEW
RFQ
1,608
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 10V ±20V