- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
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VIEW |
1,387
In-stock
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STMicroelectronics | MOSFET 2N-CH 100V 20A PWRFLAT56 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 62.5W | PowerFlat™ (5x6) | 2 N-Channel (Dual) | Standard | 100V | 20A | 67 mOhm @ 2.5A, 10V | 4.5V @ 250µA | 7.8nC @ 10V | 408pF @ 50V | |||
|
VIEW |
1,972
In-stock
|
Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 2.3W | 8-PQFN (3.3x3.3), Power33 | 2 N-Channel (Dual) | Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | |||
|
VIEW |
2,209
In-stock
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Infineon Technologies | MOSFET 2N-CH 100V 3.2A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 26W | PG-TDSON-8 Dual | 2 N-Channel (Dual) | Standard | 100V | 3.2A | 75 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 720pF @ 50V | |||
|
VIEW |
3,198
In-stock
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Infineon Technologies | MOSFET 2N-CH 8TDSON | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | 29W | PG-TDSON-8-4 | 2 N-Channel (Dual) | Standard | 100V | 16A | 61 mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | |||
