- Part Status :
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- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
917
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO263-2 | - | Obsolete | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 10A | 1.8V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 340pF @ 0V, 1MHz | |||
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VIEW |
1,136
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO220-2 | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 340pF @ 0V, 1MHz | |||
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VIEW |
2,546
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 300V 10A TO220-2 | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.4V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 660pF @ 0V, 1MHz | |||
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VIEW |
3,634
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 10A | 2V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
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VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
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VIEW |
3,126
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 10A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 10A | 1.75V @ 10A | 20µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 812pF @ 1V, 1MHz | |||
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VIEW |
978
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | |||
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VIEW |
1,863
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 635pF @ 1V, 1MHz | |||
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VIEW |
2,220
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 635pF @ 1V, 1MHz |