Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
CSD06060G
RFQ
VIEW
RFQ
917
In-stock
Cree/Wolfspeed DIODE SCHOTTKY 600V 10A TO263-2 - Obsolete Tube Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-2 Silicon Carbide Schottky 10A 1.8V @ 6A 200µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 340pF @ 0V, 1MHz
CSD06060A
RFQ
VIEW
RFQ
1,136
In-stock
Cree/Wolfspeed DIODE SCHOTTKY 600V 10A TO220-2 - Obsolete Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 10A 1.8V @ 6A 200µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 340pF @ 0V, 1MHz
CSD10030A
RFQ
VIEW
RFQ
2,546
In-stock
Cree/Wolfspeed DIODE SCHOTTKY 300V 10A TO220-2 - Obsolete Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 10A 1.4V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 660pF @ 0V, 1MHz
GB10SLT12-252
RFQ
VIEW
RFQ
3,634
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 10A TO252 - Active Tube Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 Silicon Carbide Schottky 10A 2V @ 10A 250µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 520pF @ 1V, 1MHz
GB10SLT12-220
RFQ
VIEW
RFQ
3,563
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.8V @ 10A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 520pF @ 1V, 1MHz
GP2D010A170B
RFQ
VIEW
RFQ
3,126
In-stock
Global Power Technologies Group DIODE SCHOTTKY 1.7KV 10A TO247-2 Amp+™ Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 10A 1.75V @ 10A 20µA @ 1700V 1700V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 812pF @ 1V, 1MHz
CSIC10-1200 SL
RFQ
VIEW
RFQ
978
In-stock
Central Semiconductor Corp DIODE SCHOTTKY 1.2KV 10A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 10A 1.8V @ 10A 400µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 41pF @ 600V, 1MHz
GP2D010A120B
RFQ
VIEW
RFQ
1,863
In-stock
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 10A TO247-2 Amp+™ Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 10A 1.8V @ 10A 20µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 635pF @ 1V, 1MHz
GP2D010A120A
RFQ
VIEW
RFQ
2,220
In-stock
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 10A TO220-2 Amp+™ Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 10A 1.8V @ 10A 20µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 635pF @ 1V, 1MHz