- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,123
In-stock
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Infineon Technologies | DIODE SCHOTKY 650V 12A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
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VIEW |
1,781
In-stock
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Infineon Technologies | DIODE SCHOTKY 650V 10A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
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VIEW |
3,951
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 9A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 9A (DC) | 1.7V @ 9A | 160µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 270pF @ 1V, 1MHz | |||
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VIEW |
2,624
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
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VIEW |
3,308
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 6A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 110µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 1V, 1MHz | |||
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VIEW |
2,532
In-stock
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Infineon Technologies | DIODE SCHOTKY 650V 16A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | |||
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VIEW |
3,644
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 3A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 100pF @ 1V, 1MHz | |||
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VIEW |
1,147
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 16A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.95V @ 16A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 730pF @ 1V, 1MHz | |||
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VIEW |
1,682
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz | |||
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VIEW |
996
In-stock
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Infineon Technologies | DIODE SCHOTKY 650V 20A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
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VIEW |
858
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 5A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 5A | 33µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 301pF @ 1V, 1MHz | |||
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VIEW |
1,550
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 4A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
3,195
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 56A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 56A (DC) | 1.8V @ 20A | 123µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1050pF @ 1V, 1MHz | |||
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VIEW |
711
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 62µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 525pF @ 1V, 1MHz | |||
