- Part Status :
- Mounting Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
-
- 104pF @ 400V, 1MHz (1)
- 1220pF @ 1V, 100KHz (1)
- 131pF @ 1V, 1MHz (6)
- 136pF @ 0V, 1MHz (1)
- 138pF @ 1V, 1MHz (1)
- 1740pF @ 1V, 100kHz (1)
- 2250pF @ 1V, 100kHz (1)
- 240pF @ 1V, 1MHz (4)
- 2560pF @ 1V, 100kHz (1)
- 260pF @ 1V, 1MHz (2)
- 2940pF @ 1V, 1MHz (1)
- 41pF @ 600V, 1MHz (1)
- 475pF @ 0V, 1MHz (2)
- 500pF @ 1V, 1MHz (4)
- 520pF @ 1V, 1MHz (2)
- 538pF @ 1V, 100kHz (3)
- 612pF @ 1V, 100kHz (1)
- 630pF @ 1V, 1MHz (1)
- 69pF @ 1V, 1MHz (7)
- 780pF @ 0V, 1MHz (2)
- 936pF @ 1V, 100kHz (1)
- 968pF @ 1V, 1MHz (1)
- Applied Filters :
46 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,098
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
|
VIEW |
3,634
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 10A | 2V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
3,259
In-stock
|
ON Semiconductor | 1200V 10A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 17A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
|
|
VIEW |
1,899
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
|
|
VIEW |
2,886
In-stock
|
ON Semiconductor | 1200V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 61A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2250pF @ 1V, 100kHz | |||
|
VIEW |
3,433
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
3,788
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
3,563
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
|
VIEW |
660
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
VIEW |
2,914
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | - | Active | Bulk | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
|
VIEW |
3,113
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 5A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 5A | 1.7V @ 5A | 190µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
|
VIEW |
1,209
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
|
|
VIEW |
948
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
3,418
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
1,977
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
2,562
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Silicon Carbide Schottky | 6.2A (DC) | 1.7V @ 2A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 136pF @ 0V, 1MHz | |||
|
VIEW |
2,525
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
|
VIEW |
1,513
In-stock
|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | - | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
1,398
In-stock
|
ON Semiconductor | 1200V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 77A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2560pF @ 1V, 100kHz | |||
|
|
VIEW |
3,610
In-stock
|
ON Semiconductor | 1200V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 46A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1740pF @ 1V, 100kHz | |||
|
|
VIEW |
2,798
In-stock
|
ON Semiconductor | 1200V 15A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
|
|
VIEW |
947
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
978
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | |||
|
|
VIEW |
3,060
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
2,801
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
3,494
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
1,437
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 5A DPAK | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 5A | 1.7V @ 5A | 190µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
|
VIEW |
3,491
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 5A DPAK | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 5A | 1.7V @ 5A | 190µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
|
VIEW |
731
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 5A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 5A | 1.7V @ 5A | 190µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
|
VIEW |
874
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
