- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.19V @ 60A (1)
- 1.25V @ 30A (1)
- 1.3V @ 30A (1)
- 1.3V @ 60A (1)
- 1.4V @ 30A (1)
- 1.5V @ 30A (1)
- 1.5V @ 60A (1)
- 1.6V @ 100A (1)
- 1.75V @ 10A (1)
- 1.75V @ 15A (1)
- 1.75V @ 50A (1)
- 1.7V @ 15A (1)
- 1.7V @ 20A (1)
- 1.8V @ 15A (1)
- 1.8V @ 20A (1)
- 1.8V @ 30A (1)
- 1.8V @ 50A (1)
- 1.8V @ 60A (1)
- 2.3V @ 15A (1)
- 2.3V @ 30A (1)
- 2.4V @ 30A (1)
- 2.4V @ 40A (1)
- 2.4V @ 60A (1)
- 2.5V @ 30A (1)
- 2.5V @ 60A (2)
- 2.5V @ 75A (1)
- 2V @ 20A (1)
- 3.1V @ 75A (1)
- 3.3V @ 30A (1)
- 3.3V @ 40A (1)
- 3.3V @ 60A (1)
- 3V @ 30A (1)
- 3V @ 40A (1)
- 3V @ 60A (1)
- 3V @ 75A (1)
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
-
- 104pF @ 400V, 1MHz (1)
- 1085pF @ 1V, 100kHz (1)
- 10pF @ 400V, 1MHz (1)
- 1705pF @ 1V, 100kHz (1)
- 1740pF @ 1V, 100kHz (1)
- 1989pF @ 1V, 100kHz (1)
- 2250pF @ 1V, 100kHz (1)
- 2530pF @ 1V, 100kHz (1)
- 2560pF @ 1V, 100kHz (1)
- 2940pF @ 1V, 1MHz (1)
- 33pF @ 400V, 1MHz (1)
- 612pF @ 1V, 100kHz (1)
- 936pF @ 1V, 100kHz (1)
- 968pF @ 1V, 1MHz (1)
- Applied Filters :
42 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,259
In-stock
|
ON Semiconductor | 1200V 10A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 17A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
|
VIEW |
2,776
In-stock
|
IXYS | DIODE GEN PURP 1200V 60A TO247AD | - | Active | Tube | Through Hole | TO-247-2 | TO-247AD | Standard | 60A | 1.19V @ 60A | 30µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | 33pF @ 400V, 1MHz | |||
|
VIEW |
1,372
In-stock
|
Microsemi Corporation | DIODE GEN PURP 400V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 1.5V @ 30A | 250µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 32ns | -55°C ~ 175°C | - | |||
|
VIEW |
3,760
In-stock
|
IXYS | DIODE GEN PURP 1800V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 1.25V @ 30A | 40µA @ 1800V | 1800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | 10pF @ 400V, 1MHz | |||
|
VIEW |
2,886
In-stock
|
ON Semiconductor | 1200V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 61A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2250pF @ 1V, 100kHz | |||
|
VIEW |
3,878
In-stock
|
Microsemi Corporation | DIODE GEN PURP 600V 100A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 100A | 1.6V @ 100A | - | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | - | |||
|
VIEW |
2,604
In-stock
|
Microsemi Corporation | DIODE GEN PURP 600V 15A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 15A | 1.8V @ 15A | 150µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,091
In-stock
|
Microsemi Corporation | DIODE GEN PURP 200V 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 1.3V @ 60A | 250µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 31ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,643
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 2.5V @ 30A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 370ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,282
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 3.3V @ 60A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,630
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1KV 75A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 75A | 3V @ 75A | 100µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,549
In-stock
|
SMC Diode Solutions | DIODE GEN PURP 600V 20A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Standard | 20A | 1.7V @ 20A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,525
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
|
VIEW |
3,541
In-stock
|
Microsemi Corporation | DIODE GEN PURP 200V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 1.3V @ 30A | 250µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 24ns | -55°C ~ 175°C | - | |||
|
VIEW |
932
In-stock
|
Microsemi Corporation | DIODE GEN PURP 300V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 1.4V @ 30A | 250µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | - | |||
|
VIEW |
3,618
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 3.3V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,398
In-stock
|
ON Semiconductor | 1200V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 77A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2560pF @ 1V, 100kHz | |||
|
VIEW |
3,610
In-stock
|
ON Semiconductor | 1200V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 46A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1740pF @ 1V, 100kHz | |||
|
VIEW |
3,440
In-stock
|
ON Semiconductor | 650V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | |||
|
VIEW |
1,854
In-stock
|
ON Semiconductor | 650V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 48A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1989pF @ 1V, 100kHz | |||
|
VIEW |
3,408
In-stock
|
ON Semiconductor | 650V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | |||
|
VIEW |
2,798
In-stock
|
ON Semiconductor | 1200V 15A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
|
VIEW |
3,576
In-stock
|
ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 25A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
|
VIEW |
3,432
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 75A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 75A | 3.1V @ 75A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 325ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,942
In-stock
|
SMC Diode Solutions | DIODE GEN PURP 600V TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Standard | - | 1.7V @ 15A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,671
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 2.5V @ 60A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 400ns | -55°C ~ 175°C | - | |||
|
VIEW |
3,588
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 40A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 40A | 3.3V @ 40A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 350ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,170
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1KV 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 3V @ 60A | 100µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 255ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,620
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1KV 15A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 15A | 2.3V @ 15A | 250µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 260ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,911
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 43A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 104pF @ 400V, 1MHz |