- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,874
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 6A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
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VIEW |
1,812
In-stock
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Infineon Technologies | DIODE GEN PURP 600V 6A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 6A (DC) | 1.6V @ 6A | 27µA @ 600V | 600V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
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VIEW |
3,842
In-stock
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Infineon Technologies | DIODE GEN PURP 600V 6A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 6A (DC) | 1.95V @ 6A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
|
VIEW |
2,020
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 6A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 6A (DC) | 1.45V @ 6.5A | - | 1500V | Fast Recovery = 200mA (Io) | 230ns | 150°C (Max) | - | |||
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VIEW |
2,613
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 6A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 6A (DC) | 1.6V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 160ns | 150°C (Max) | - | |||
|
VIEW |
962
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 6A TO220-2L | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 35pF @ 650V, 1MHz | |||
|
VIEW |
2,431
In-stock
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Comchip Technology | DIODE SCHOTTKY 60V 6A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Schottky | 6A (DC) | 750mV @ 6A | 500µA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
2,612
In-stock
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Comchip Technology | DIODE SCHOTTKY 40V 6A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Schottky | 6A (DC) | 550mV @ 6A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 125°C | - | |||
|
VIEW |
2,288
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | - | Obsolete | Tube | Through Hole | TO-220-3 | P-TO220AB | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 0V, 1MHz | |||
|
VIEW |
3,058
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 6A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 6A (DC) | 1.6V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 160ns | 150°C (Max) | - | |||
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|
VIEW |
631
In-stock
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Comchip Technology | DIODE SCHOTTKY 100V 6A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Schottky | 6A (DC) | 850mV @ 6A | 500µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | - | |||
|
VIEW |
1,004
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 6A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 179pF @ 1V, 1MHz | |||
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VIEW |
3,624
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 6A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 6A (DC) | 1.55V @ 6A | 120µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 219pF @ 1V, 1MHz | |||
|
VIEW |
2,684
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 6A TO263AB | - | Active | Digi-Reel® | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 6A (DC) | 1.55V @ 6A | 120µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 219pF @ 1V, 1MHz | |||
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VIEW |
1,860
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 6A TO263AB | - | Active | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 6A (DC) | 1.55V @ 6A | 120µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 219pF @ 1V, 1MHz | |||
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|
VIEW |
2,144
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 6A TO263AB | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 6A (DC) | 1.55V @ 6A | 120µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 219pF @ 1V, 1MHz | |||
