- Part Status :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
783
In-stock
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STMicroelectronics | DIODE GEN PURP 200V 4A DPAK | - | Obsolete | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Standard | 4A | 1.05V @ 4A | 3µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | 175°C (Max) | - | |||
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VIEW |
2,808
In-stock
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STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | - | |||
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VIEW |
2,986
In-stock
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STMicroelectronics | DIODE SCHOTTKY 600V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | |||
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VIEW |
3,361
In-stock
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STMicroelectronics | DIODE GEN PURP 200V 4A TO220FP | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220FPAC | Standard | 4A | 1.05V @ 4A | 3µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | 175°C (Max) | - | |||
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VIEW |
3,742
In-stock
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STMicroelectronics | DIODE GEN PURP 200V 4A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 4A | 1.05V @ 4A | 3µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | 175°C (Max) | - | |||
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VIEW |
3,528
In-stock
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STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz |